Tesla's AI5 Chip Split Between TSMC and Samsung on 3nm and 2nm Processes

Tesla has adopted a dual-sourcing strategy for its AI5 chip, with manufacturing split between TSMC and Samsung. The TSMC version is built on a 3nm process node and co-designed with Global Unichip Corporation (GUC), with tape-out scheduled one quarter ahead of the Samsung version. In contrast, the Samsung-manufactured variant uses a 2nm process featuring GAA (Gate-All-Around) transistor architecture. By comparison, TSMC’s 3nm process retains the FinFET structure, resulting in significant physical implementation differences between the two versions. Due to their divergent process nodes and technological approaches, the Samsung-fabricated version is expected to incur higher manufacturing costs.