From：Internet Info Agency 2026-09-03 10:06:09
On September 2, BYD Semiconductor launched its new generation of automotive-grade 1000V SiC power modules, the V-305B. Featuring DC stacked terminals and laser welding technology, the module achieves a total system stray inductance of less than 10 nH and delivers a 15% increase in power density. The module’s intrinsic parasitic inductance is as low as 5.5 nH, with a blocking voltage exceeding 1500 V. Compared to conventional modules, which typically exhibit stray inductance above 20 nH, this solution reduces switching voltage overshoot by 30% and switching losses by 30%. Under 1000V operating conditions, the module delivers an output current exceeding 650 Arms. The V-305B employs a stacked DC terminal design for positive and negative poles, minimizing the power loop area. Laser welding replaces traditional wire bonding for connections from the chips to the terminals. In terms of reliability, the chips utilize double-sided silver sintering, the substrate is made of silicon nitride AMB material, and the heat sink baseplate features an elliptical segmented structure. The outer frame is ultrasonically welded to the substrate, and the encapsulant silicone gel has a glass transition temperature (Tg) of up to 200°C. Additionally, the internal gate drive circuitry adopts a symmetrical layout to ensure balanced current sharing among paralleled chips. Available variants of the module include 1200V/1040A, 1500V/1400A, 1500V/1040A, and 1500V/840A, all sharing a uniform package size of 154.5 × 128.5 × 32 mm³ and weighing 780 grams.
