On September 16, at the 2026 Sixth Automotive Chip Ecosystem Conference, Wang Junyue, Senior Manager of Bosch Power Semiconductor Products and Global Head of Silicon Carbide Data Center Business, delivered a keynote speech outlining Bosch’s technology roadmap in silicon carbide (SiC), its capacity deployment, and its business expansion into AI data centers (AIDCs). Wang stated that Bosch has opted for the trench-type approach in its SiC chip technology roadmap. Bosch began developing silicon carbide as early as 2002 and carries out both epitaxial growth and chip fabrication in its own facilities. Regarding shipment figures, since achieving mass production of SiC for automotive main-drive inverters in 2021, Bosch has shipped over 70 million chips cumulatively—now approximately 80 million—with zero reported failures. In terms of modules, cumulative shipments across each generation have exceeded 14 million units. On capacity, Bosch currently operates two fully 8-inch-based SiC wafer fabs in Germany and the United States, with the U.S. facility scheduled to begin mass production by the end of 2026. Wang noted that between 2024 and 2030, Bosch plans to expand its global SiC capacity twentyfold. In terms of product evolution, Bosch is currently at the second-generation chip stage. Third-generation chips are slated for mass production in 2027, followed by further iterations of trench technology in 2029 and 2031. Additionally, Wang mentioned that Bosch officially launched its global AI data center business on July 1, 2026, and highlighted that solid-state transformers (SSTs) represent an almost entirely silicon carbide-based application solution.