ROHM Unveils New Top-Side Cooled SiC MOSFET Package for High Voltage and Superior Thermal Performance

Semiconductor manufacturer ROHM has developed the TSC3PA package (measuring 14.00×18.58×3.50 mm) for silicon carbide (SiC) MOSFETs, featuring a top-side cooling structure that places the thermal pad on the top of the package. This design supports automated assembly and delivers thermal performance comparable to the conventional through-hole TO-247-4L package. The new package is suitable for power conversion circuits in applications such as onboard chargers (OBCs) and electric compressors in electric vehicles (EVs). As SiC devices expand beyond main inverters into OBCs and electric compressors in EVs, this packaging solution helps enhance charging speed and driving range. Additionally, the technology is also applicable to industrial equipment—including high-efficiency server power supplies and photovoltaic inverters—where stringent efficiency requirements exist.