Qingchun Semiconductor Secures Another International Automotive OEM Award for SiC MOSFET Mass Production in Overseas EVs

Recently, Qingchun Semiconductor has secured a定点 (nomination) from a leading global automaker for mass production of SiC MOSFETs used in overseas new energy vehicle (NEV) main drive systems. The company had previously received a nomination from the same automaker for a development project in 2024 and obtained its first mass-production nomination for an overseas vehicle model in 2025. Both the development and mass-production programs are progressing smoothly, with volume deliveries expected to commence in 2027 and full-scale supply beginning in 2028. Qingchun Semiconductor will complete a series of pre-integration activities required before deployment in vehicles. Its third-generation SiC MOSFET leverages a proprietary technology platform, offering lower specific on-resistance, further optimized switching losses and reverse recovery characteristics, enhanced current output capability, and improved high-temperature stability compared to the previous generation.